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| STB7102 0.5/2.5 GHz UHF LO BUFFER AMPLIFIER * OPERATING FREQUENCY 500-2500MHz * LOW CURRENT CONSUMPTION * EXCELLENT ISOLATION * ULTRA MINIATURE SOT323-6L PACKAGE SOT323-6L (SC70) APPLICATIONS * BUFFER AMPLIFIER FOR 0.5/2.5 GHz APPLICATIONS * CDMA/PCS LO BUFFER AMPLIFIER ORDER CODE STB7102TR BRANDING 102 (Top View) 3 4 (Bottom View) 4 5 6 3 2 1 102 DESCRIPTION The STB7102, designed for RF Mobile Phone applications (0.5/2.5GHz), is an high isolation Local Oscillator Buffer Amplifier. Manufactured in the third generation of ST proprietary bipolar process, it offers an excellent isolation and a good linearity using only 4mA current consumption. The STB7102 is housed in an ultra miniature package SOT323-6L surface mount package. 2 1 5 6 PIN CONNECTION Pin No. 1 2 3 4 5 6 Pin Name INPUT GND GND OUTPUT GND VCC ABSOLUTE MAXIMUM RATINGS Symbol Vcc Tstg Ta Parameter Supply voltage Storage temperature Operating ambient temperature Conditions Value 3.3 -40 to +100 -30 to +85 Unit V oC o C February, 25 2002 1/9 STB7102 ELECTRICAL CHARACTERISTICS (CELL BAND) (Ta = +25oC, Vcc = 2.7V, Zs = ZL = 50, tested in circuit shown in fig.1, unless otherwise specified) Symbol Freq. Vcc Icc P1dB Gp NF Isol. RLin RLout Supply Voltage Current Consumption Output Power at 1dB Compression Point Power Gain Noise Figure Reverse Isolation Input Return Loss Output Return Loss F = 1010 MHz F = 1010 MHz F = 1010 MHz F = 1010 MHz F = 1010 MHz F = 1010 MHz Parameters Frequency Range Test Conditions Min 990 2.6 3.3 2.7 4.3 -2 16.7 2.7 45 30 17.8 Typ Max 1030 2.8 5.3 Unit MHz V mA dBm dB dB dB dB dB Figure 1 Cell Band Application Circuit Configuration C8 1.5pF U1 L2 2n2 J2 RF OUT ULOBA 3 C1 33pF J1 RF IN 2 1 GND GND INPUT OUT GND VCC 4 5 6 JP1 VCC L4 5n6 C5 10nF C3 33pF L1 33nH C2 1uF 1 2 L3 10nH 2/9 STB7102 TYPICAL PERFORMANCE (CELL BAND) Power Gain vs. Frequency and Voltage 20 18 16 14 Power Gain (dB) Vcc = 2.7 V Vcc = 2.6 V Power Gain (dB) Vcc = 2.8 V Power Gain vs. Frequency and Temperature 20 18 16 14 12 10 8 6 4 2 Ta = 25 C Ta = 85 C Ta = -30 C 12 10 8 6 4 2 Ta = 25 C Vcc = 2.7 V 0 800 900 1000 Frequency (MHz) 0 1100 1200 800 900 1000 Frequency (MHz) 1100 1200 Reverse Isolation vs. Frequency and Voltage 0 Ta = 25 C Reverse Isolation vs. Frequency and Temperature 0 Vcc = 2.7 V -10 -10 Reverse Isolation (dB) Reverse Isolation (dB) -20 -20 -30 -30 -40 Vcc = 2.7 V -40 Ta = -30 C -50 Vcc = 2.6 V Vcc = 2.8 V -50 Ta = 85 C Ta = 25 C -60 800 900 1000 Frequency (M Hz) -60 1100 1200 800 900 1000 Frequency (M Hz) 1100 1200 Input Return Loss vs. Frequency and Voltage 0 Ta = 25 C Input Return Loss vs. Frequency and Temperature 0 Vcc = 2.7 V -5 -10 -15 Vcc = 2.8 V -5 -10 -15 -20 -25 -30 Vcc = 2.6 V Input Return Loss (dB) Input Return Loss (dB) -20 -25 -30 -35 800 900 1000 Frequency (MHz) Ta = 85 C Vcc = 2.7 V Ta = -30 C Ta = 25 C 1100 1200 -35 800 900 1000 Frequency (MHz) 1100 1200 3/9 STB7102 TYPICAL PERFORMANCE (CELL BAND) Output Return Loss vs. Frequency and Voltage 0 Ta = 25 C Output Return Loss vs. Frequency and Temperature 0 Vcc = 2.7 V -5 -10 Output Return Loss (dB) Vcc = 2.7 V Output Return Loss (dB) Vcc = 2.8 V Vcc = 2.6 V -5 Ta = 85 C -10 -15 -20 -25 -30 -35 -40 -45 Ta = 25 C Ta = -30 C -15 -20 -25 -30 -35 -40 -45 800 900 1000 Frequency (MHz) 1100 1200 800 900 1000 Frequency (MHz) 1100 1200 Noise Figure vs. Frequency 4 3.5 Output Power @ 1dB compression point 17 16 3 Noise Figure (dB) 2.5 2 P1dB 1.5 1 14 13 0.5 F = 1010 MHz 0 800 900 1000 Frequency (MHz) 12 1100 1200 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 Poutput (dBm) 4/9 Gain (dB) 15 STB7102 ELECTRICAL CHARACTERISTICS (PCS BAND) (Ta = +25oC, Vcc = 2.7V, Zs = ZL = 50, tested in circuit shown in fig.2, unless otherwise specified) Symbol Freq. Vcc Icc P1dB Gp NF Isol. RLin RLout Supply Voltage Current Consumption Output Power at 1dB Compression Point Power Gain Noise Figure Reverse Isolation Input Return Loss Output Return Loss F = 2085 MHz F = 2085 MHz F = 2085 MHz F = 2085 MHz F = 2085 MHz F = 2085 MHz Parameters Frequency Range Test Conditions Min 2040 2.6 3.3 2.7 4.3 -1 10 5 41 17 24 Typ Max 2135 2.8 5.3 Unit MHz V mA dBm dB dB dB dB dB Figure 2 PCS Band Application Circuit Configuration C8 22pF U1 L2 6n8 J2 RF OUT ULOBA 3 C1 33pF J1 RF IN C5 10nF C3 33pF L1 33nH C2 1uF 2 1 GND GND INPUT OUT GND VCC 4 5 6 JP1 VCC 1 2 L3 10nH 5/9 STB7102 TYPICAL PERFORMANCE (PCS BAND) Power Gain vs. Frequency and Voltage 12 Vcc = 2.7 V Vcc = 2.8 V Power Gain vs. Frequency and Temperature 12 Ta = -30 C Ta = 25 C 10 Vcc = 2.6 V 10 Ta = 85 C Power Gain (dB) Ta = 25 C Power Gain (dB) 8 8 6 6 4 4 2 2 Vcc = 2.7 V 0 1800 1900 2000 Frequency (MHz) 2100 2200 0 1800 1900 2000 Frequency (MHz) 2100 2200 Reverse Isolation vs. Frequency and Voltage 0 Ta = 25 C Reverse Isolation vs. Frequency and Temperature 0 Vcc = 2.7 V -10 Reverse Isolation (dB) -10 Reverse Isolation (dB) -20 -20 -30 Vcc = 2.7 V Vcc = 2.6 V -30 Ta = 25 C -40 -40 Ta = -30 C Ta = 85 C Vcc = 2.8 V -50 -50 -60 1800 1900 2000 Frequency (MHz) 2100 2200 -60 1800 1900 2000 Frequency (MHz) 2100 2200 Input Return Loss vs. Frequency and Voltage 0 Ta = 25 C Input Return Loss vs. Frequency and Temperature 0 Vcc = 2.7 V -2 -4 Input Return Loss (dB) -2 -4 Input Return Loss (dB) -6 -8 -10 -12 -14 -16 Vcc = 2.7 V Vcc = 2.8 V -6 -8 -10 -12 Ta = 25 C -14 Ta = -30 C -16 -18 -20 1800 Ta = 85 C -18 -20 1800 Vcc = 2.6 V 1900 2000 Frequency (MHz) 2100 2200 1900 2000 Frequency (M Hz) 2100 2200 6/9 STB7102 TYPICAL PERFORMANCE (PCS BAND) Output Return Loss vs. Frequency and Voltage 0 Ta = 25 C Output Return Loss vs. Frequency and Temperature 0 Vcc = 2.7 V -5 -10 Output Return Loss (dB) -5 -10 Output Return Loss (dB) -15 -20 Vcc = 2.7 V Vcc = 2.8 V -15 Ta = -30 C -20 -25 -30 -35 -40 -45 1800 Ta = 85 C -25 Vcc = 2.6 V -30 -35 -40 -45 1800 Ta = 25 C 1900 2000 Frequency (MHz) 2100 2200 1900 2000 Frequency (MHz) 2100 2200 Noise Figure vs. Frequency 6 5.5 Output Power @ 1dB compression point 11 10 5 Noise Figure (dB) 4.5 4 3.5 3 P1dB 8 7 2.5 F = 2087.5 MHz 2 1800 6 1900 2000 Frequency (MHz) 2100 2200 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 Poutput (dBm) 7/9 Gain (dB) 9 STB7102 SOT323-6L MECHANICAL DATA mm Inch MAX 1.1 0.1 1 0.3 0.18 2.2 1.35 0.65 1.8 0.1 2.4 0.4 0.071 0.004 MIN. 0.031 0 0.0031 0.006 0.004 0.071 0.045 0.025 0.094 0.016 TYP. MAX 0.043 0.004 0.039 0.012 0.007 0.088 0.59 DIM. A A1 A2 b c D E e H Q MIN. 0.8 0 0.8 0.15 0.1 1.8 1.15 TYP. 8/9 STB7102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9 |
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